SiO2 doped TiO2 thin films were synthesized on glass substrates by sol-gel dip coating method. The thin films were analyzed for different concentration of SiO2. The prepared films were preannealed at 100°C and post annealed at 400°C. The XRD pattern of the films confirmed tetragonal structure with the nanocrystalline nature. The films exhibited a pure anatase phase with a strong orientation along (101) plane. Scherrer’s formula was used to calculate crystallite size. Surface morphology of films were studied using SEM. The presence of Si with Ti and O was confirmed using EDAX. The band gap energy was calculated using UV – VIS spectroscopy. The thickness results suggested that thickness of the film increases with the increase in the concentration of dopant. The room temperature PL spectra of thin films showed blue and green emissions at 485 nm and 560 nm. The surface roughness of the thin film was characterized by AFM.