Porosity and its thickness are important factors in determination of luminescence efficiency in semiconductor devices. Here the relationship between etching time and current density of p-type porous silicon (PSi) with porosity and its thickness need to be determined. Three set of p-type PSi samples were prepared by using an electrochemical method under three current densities (10, 20 and 30 mA/cm2) with different etching times (20, 40, 60 and 80 min). It is found that the porosity and porous thickness are increased with the increase of current density or etching time. The porosity and its thickness increased initially up to 40 min but the increment is slow for porosity and is faster for its thickness after further increment of etching time. These two parameters (porosity and its thickness) increased almost linearly with the increase of current density